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Graphene/silicon photodiodes

17 Ottobre 2017 15:00 - 16:00
14 - 15 IV piano St. 9
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Dipartimento di Fisica, Universita'? di Salerno
Area di Ricerca
Superconduttivita', Sistemi fortemente correlati, Eterostrutture e loro applicazioni

The graphene/silicon (Gr/Si) junction is currently the subject of an intense research activity. It holds promises for a new generation of graphene-based devices such as photodetectors, solar cells and chemical-biological sensors, and offers the opportunity to study new fundamental physics at the interface between a 2D semimetal and a 3D semiconductor. A Schottky barrier, strongly dependent on the fabrication method and surface quality, is usually formed at the Gr/Si junction, making it a Schottky diode. Compared to a metal-semiconductor junction, the Gr/Si diode presents importatnt peculiarities. The vanishing density of states of graphene at the Dirac point enables energy Fermi tuning and hence Schottky barrier height modulation by a single anode-cathode bias. Furthermore, graphene can be used as transparent layer to implement an ultra-shallow junction, which facilitates photo-charge separation and transport in optoelectronic applications. In this talk, I will present the I-V-T and C-V-T characterization as well as the photoresponse of two types of Gr/Si devices, fabricated on flat and patterned Si substrates, respectively. I will discuss key features, extract relevant parameters and show that the Gr/Si junction can be operated as a high responsivity photodiode.


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  • 17 Ottobre 2017 15:00 - 16:00

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Calendario Attività